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2014•Unpublished venueRequires access

Periodically Oriented Gallium Nitride: Materials Development

Jennifer K. Hite, Jaime A. Freitas, R. Goswami, Michael A. Mastro, I. Vurgaftman, J. R. Meyer, Christopher G. Brown, Francis J. Kub, S. R. Bowman, Charles R. Eddy

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Abstract

Methods for growing periodically alternating polarities of GaN on N-polar and Ga-polar GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.

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What this paper is about

Methods for growing periodically alternating polarities of GaN on N-polar and Ga-polar GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.

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Available abstract

Methods for growing periodically alternating polarities of GaN on N-polar and Ga-polar GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.

Key concepts: Gallium nitride, Wide-bandgap semiconductor, Polar, Materials science, Gallium, Nitride, Optoelectronics, Optics

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