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2014•Applied Mechanics and MaterialsOpen access

Numerical Simulation of the Effection of Inlet Velocity in GaN Growth by MOCVD

Peng Dong, Zhi‐Gang Chen, Cong Cong Tan

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Abstract

A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet velocity is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process.

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What this paper is about

A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet velocity is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process.

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Available abstract

A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet velocity is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process.

Key concepts: Metalorganic vapour phase epitaxy, Gallium nitride, Chemical vapor deposition, Inlet, Materials science, Deposition (geology), Process (computing), Computer simulation

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