Gudrun Feix
Abstract
This paper explains the constraints for the use of very fast switching, wide band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) given in standard wire bonded power modules. Furthermore, a way to make full use of them by using an advanced packaging method is given here.
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This paper explains the constraints for the use of very fast switching, wide band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) given in standard wire bonded power modules. Furthermore, a way to make full use of them by using an advanced packaging method is given here.
Key concepts: Silicon carbide, Wide-bandgap semiconductor, Gallium nitride, Semiconductor, Materials science, Power semiconductor device, Power (physics), Optoelectronics