2002•Unpublished venueRequires access

A novel isolated, compensated Darlington based-drive configuration

J.H.R. Enslin, Samantha Hartman

Abstract

An isolated version of the compensated base-drive for high power bipolar transistor switches is introduced. A unique pulse transformer is used to drive a high power bipolar transistor by means of a compensated Darlington pair, consisting of an IGBT driving transistor and a high current single bipolar transistor. In high efficiency, high power bridge applications of high current switches, the saturation voltage should be ultra-low, which implies a high power bipolar transistor in deep saturation. This isolated base-drive circuit is described and evaluated in these applications.>

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Available abstract

Key concepts: Insulated-gate bipolar transistor, Bipolar junction transistor, Transistor, Electrical engineering, Power semiconductor device, Current injection technique, Multiple-emitter transistor, Transformer