ScholarLens Back to search
1995•HAL (Le Centre pour la Communication Scientifique Directe)Open access

A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS

Shanqi Zhao, Dominique Planson, Jean-Pierre Chante

Open full text 0 citations

Abstract

International audience

Open-access reader

About this research paper

What this paper is about

International audience

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

International audience

Key concepts: Insulated-gate bipolar transistor, Current injection technique, Bipolar junction transistor, Transistor, Electrical engineering, Multiple-emitter transistor, Power semiconductor device, Power (physics)

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS — Research Paper | ScholarLens