Dominique Bergogne, Bruno Allard, Hervé Morel
Abstract
A method is presented to characterize the IGBT (insulated gate bipolar transistor) from a power module to obtain an internal temperature estimation. A prototype is described. The technique is compatible with operating PWM-based converters.
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A method is presented to characterize the IGBT (insulated gate bipolar transistor) from a power module to obtain an internal temperature estimation. A prototype is described. The technique is compatible with operating PWM-based converters.
Key concepts: Insulated-gate bipolar transistor, Converters, Power semiconductor device, Current injection technique, Power (physics), Pulse-width modulation, Electronic engineering, Gate driver