ScholarLens Back to search
2002•Unpublished venueRequires access

An electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD)

K. Kurimoto, Kaoru Yamashita, I. Miyanaga, Atsushi Hori, S. Odanaka

Open publisher page 4 citations

Abstract

This paper describes an electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD). Electrothermal transient characteristics in ESD protection devices are clarified in detail by modeling of complicated snapback behavior and thermal modeling in the multiple layer. The new model allows the simulation for the damage region and failure thresholds of n-MOSFETs under ESD stress conditions.>

About this research paper

What this paper is about

This paper describes an electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD). Electrothermal transient characteristics in ESD protection devices are clarified in detail by modeling of complicated snapback behavior and thermal modeling in the multiple layer. The new model allows the simulation for the damage region and failure thresholds of n-MOSFETs under ESD stress conditions.>

Why it matters

OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This paper describes an electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD). Electrothermal transient characteristics in ESD protection devices are clarified in detail by modeling of complicated snapback behavior and thermal modeling in the multiple layer. The new model allows the simulation for the damage region and failure thresholds of n-MOSFETs under ESD stress conditions.>

Key concepts: Electrostatic discharge, Snapback, Transient (computer programming), Thermal, Electronic engineering, Equivalent circuit, Electrical engineering, Computer science

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
An electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD) — Research Paper | ScholarLens