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2022•Unpublished venueRequires access

Study on ESD Protection Device Based on 4H-SiC GGNMOS with Improved Snapback Characteristics

Jang-Han Joung, Sang-Wook Kwon, Jun-Ho Kong, Byung-Seok Lee, Yonz-Seo Koo

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Abstract

In this paper, we propose a new structure of 4H-SiC-based ESD(Electrostatic discharge) protection device with low on-resistance and excellent high-temperature characteristics while improving trigger technology by applying floating technology. By TLP measurement, the characteristics were analyzed compared to the conventional GGNMOS. In addition, a method to improve the snapback characteristics of the proposed device with design variables was introduced. As a result, a device with improved snapback characteristics and improved reliability in 70 V applications was proposed.

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What this paper is about

In this paper, we propose a new structure of 4H-SiC-based ESD(Electrostatic discharge) protection device with low on-resistance and excellent high-temperature characteristics while improving trigger technology by applying floating technology. By TLP measurement, the characteristics were analyzed compared to the conventional GGNMOS. In addition, a method to improve the snapback characteristics of the proposed device with design variables was introduced. As a result, a device with improved snapback characteristics and improved reliability in 70 V applications was proposed.

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Available abstract

In this paper, we propose a new structure of 4H-SiC-based ESD(Electrostatic discharge) protection device with low on-resistance and excellent high-temperature characteristics while improving trigger technology by applying floating technology. By TLP measurement, the characteristics were analyzed compared to the conventional GGNMOS. In addition, a method to improve the snapback characteristics of the proposed device with design variables was introduced. As a result, a device with improved snapback characteristics and improved reliability in 70 V applications was proposed.

Key concepts: Snapback, Electrostatic discharge, Reliability (semiconductor), Materials science, Electronic engineering, Optoelectronics, Electrical engineering, Engineering

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