ScholarLens Back to search
2013•Surface Review and LettersRequires access

THE EFFECT OF DOPANT DOSE LOSS DURING ANNEALING ON HEAVILY DOPED SURFACE LAYERS OBTAINED BY RECOIL IMPLANTATION OF ANTIMONY IN SILICON

M.N. Mesli, B. BENBAHI, H. Bouafia, M. Belmekki, B. Abidri, S. Hiadsi .

Open publisher page 2 citations

Abstract

The aim of our investigation is focused on studying the effect of dopant dose loss during annealing treatments on heavily doped surface layers, obtained by recoil implantation of antimony in silicon. We are interested particularly by the increase of sheet resistance consequently to the shallow junctions obtained at the surface of substrate and the contribution of the dopant dose loss phenomenon following the high concentration of impurities at the surface. In this work, we report some quantitative data concerning the dopant loss at the surface of silicon implanted and its dependence with annealing treatments. Electrical measurements associated with Rutherford backscattering (RBS) technical analysis showed interesting values of sheet resistance compared with classical ion implantation and despite dopant dose loss phenomenon.

About this research paper

What this paper is about

The aim of our investigation is focused on studying the effect of dopant dose loss during annealing treatments on heavily doped surface layers, obtained by recoil implantation of antimony in silicon. We are interested particularly by the increase of sheet resistance consequently to the shallow junctions obtained at the surface of substrate and the contribution of the dopant dose loss phenomenon following the high concentration of impurities at the surface. In this work, we report some quantitative data concerning the dopant loss at the surface of silicon implanted and its dependence with annealing treatments. Electrical measurements associated with Rutherford backscattering (RBS) technical analysis showed interesting values of sheet resistance compared with classical ion implantation and despite dopant dose loss phenomenon.

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The aim of our investigation is focused on studying the effect of dopant dose loss during annealing treatments on heavily doped surface layers, obtained by recoil implantation of antimony in silicon. We are interested particularly by the increase of sheet resistance consequently to the shallow junctions obtained at the surface of substrate and the contribution of the dopant dose loss phenomenon following the high concentration of impurities at the surface. In this work, we report some quantitative data concerning the dopant loss at the surface of silicon implanted and its dependence with annealing treatments. Electrical measurements associated with Rutherford backscattering (RBS) technical analysis showed interesting values of sheet resistance compared with classical ion implantation and despite dopant dose loss phenomenon.

Key concepts: Dopant, Sheet resistance, Silicon, Annealing (glass), Materials science, Doping, Ion implantation, Antimony

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
THE EFFECT OF DOPANT DOSE LOSS DURING ANNEALING ON HEAVILY DOPED SURFACE LAYERS OBTAINED BY RECOIL IMPLANTATION OF ANTIMONY IN SILICON — Research Paper | ScholarLens