2009•Unpublished venueRequires access
Activation of ion implanted Si for backside processing by ultra-fast laser thermal annealing: Energy homogeneity and micro-scale sheet resistance
Karim Huet, Rong Ming Lin, C. Boniface, F. Desse, Dirch Hjorth Petersen, Ole Per Hansen, N. Variam, Antonino La Magna, Michel Schuhmacher, Anna B. O. Jensen, Peter F. Nielsen, Hervé Besaucèle, J. Venturing
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Abstract
In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.