Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode
Shingo Suzuki, Naoto Namekata, Kenji Tsujino, Shuichiro Inoue
Abstract
Shingo Suzuki, Naoto Namekata, Kenji Tsujino, Shuichiro Inoue
Abstract
We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.
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We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.
Key concepts: Avalanche photodiode, Single-photon avalanche diode, Avalanche diode, Optoelectronics, Photodiode, Avalanche breakdown, Silicon, Materials science