Md. Mottaleb Hossain, Payman Zarkesh-Ha, J.P.R. David, Majeed M. Hayat
Abstract
Breakdown voltage, mean gain and excess noise factor of CMOS-compatible p-n junction silicon avalanche photodiodes are predicted using the dead space multiplication theory. Measured dark current and breakdown voltages are also reported supporting low-voltage operation.
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Breakdown voltage, mean gain and excess noise factor of CMOS-compatible p-n junction silicon avalanche photodiodes are predicted using the dead space multiplication theory. Measured dark current and breakdown voltages are also reported supporting low-voltage operation.
Key concepts: Avalanche photodiode, Avalanche diode, Single-photon avalanche diode, Breakdown voltage, Avalanche breakdown, Optoelectronics, CMOS, Materials science