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Avalanche Photodiode with Low Avalanche Breakdown Voltage

Rongdun Hong, Xiaping Chen, Mingkun Zhang, Zhengyun Wu, Yi Zhou

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Abstract

H-SiC avalanche photodiode with a separated absorption region, a charge adjustment region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the doping concentration of each layer, the avalanche breakdown voltage and photo-response of the device is found to be dependent of the thickness of the multiplication region. The avalanche breakdown voltage shows a minimum and the photo-response shows a maximum at certain thickness of the multiplication region. The results are explained by the electric field distribution of the device and the impact ionization theory.

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What this paper is about

H-SiC avalanche photodiode with a separated absorption region, a charge adjustment region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the doping concentration of each layer, the avalanche breakdown voltage and photo-response of the device is found to be dependent of the thickness of the multiplication region. The avalanche breakdown voltage shows a minimum and the photo-response shows a maximum at certain thickness of the multiplication region. The results are explained by the electric field distribution of the device and the impact ionization theory.

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Available abstract

H-SiC avalanche photodiode with a separated absorption region, a charge adjustment region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the doping concentration of each layer, the avalanche breakdown voltage and photo-response of the device is found to be dependent of the thickness of the multiplication region. The avalanche breakdown voltage shows a minimum and the photo-response shows a maximum at certain thickness of the multiplication region. The results are explained by the electric field distribution of the device and the impact ionization theory.

Key concepts: Avalanche photodiode, Avalanche breakdown, Avalanche diode, Single-photon avalanche diode, Breakdown voltage, Impact ionization, Optoelectronics, Materials science

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