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2011•Journal of Applied PhysicsRequires access

Ga14Sb86 film for ultralong data retention phase-change memory

Yegang Lü, Sannian Song, Zhitang Song, Bo Liu

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Abstract

Ga14Sb86 film has been studied to explore its suitability as a novel active material for phase change memory application. With a crystallization temperature about 220 °C, Ga14Sb86 film has the activation energy of crystallization larger than 4.6 eV obtained both by nonisothermal and isothermal methods. This leads to an ultralong data retention, which is characterized by the temperature for ten years data retention at 162 °C. The reversible phase change can be realized by a pulse as short as 20 ns. Ga14Sb86-based cell shows a good endurance up to 3.2x105 SET-RESET cycles during endurance test.

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What this paper is about

Ga14Sb86 film has been studied to explore its suitability as a novel active material for phase change memory application. With a crystallization temperature about 220 °C, Ga14Sb86 film has the activation energy of crystallization larger than 4.6 eV obtained both by nonisothermal and isothermal methods. This leads to an ultralong data retention, which is characterized by the temperature for ten years data retention at 162 °C. The reversible phase change can be realized by a pulse as short as 20 ns. Ga14Sb86-based cell shows a good endurance up to 3.2x105 SET-RESET cycles during endurance test.

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OpenAlex reports 76 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Ga14Sb86 film has been studied to explore its suitability as a novel active material for phase change memory application. With a crystallization temperature about 220 °C, Ga14Sb86 film has the activation energy of crystallization larger than 4.6 eV obtained both by nonisothermal and isothermal methods. This leads to an ultralong data retention, which is characterized by the temperature for ten years data retention at 162 °C. The reversible phase change can be realized by a pulse as short as 20 ns. Ga14Sb86-based cell shows a good endurance up to 3.2x105 SET-RESET cycles during endurance test.

Key concepts: Data retention, Phase-change memory, Materials science, Isothermal process, Crystallization, Reset (finance), Phase change, Phase (matter)

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