ScholarLens Back to search
2012•Applied Physics LettersRequires access

Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed

Min Zhu, Liangcai Wu, Zhitang Song, Feng Rao, Daolin Cai, Peng Cheng, Xilin Zhou, Kun Ren, Sannian Song, Bo Liu, Songlin Feng

Open publisher page 75 citations

Abstract

With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/Reset pulses of 100 ns/50 ns.

About this research paper

What this paper is about

With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/Reset pulses of 100 ns/50 ns.

Why it matters

OpenAlex reports 75 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/Reset pulses of 100 ns/50 ns.

Key concepts: Crystallization, Phase-change memory, Reset (finance), Data retention, Materials science, Phase (matter), Germanium compounds, Phase-change material

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed — Research Paper | ScholarLens