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Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

Kin‐Fu Kao, Chain‐Ming Lee, Ming‐Jung Chen, Ming‐Jinn Tsai, Tsung‐Shune Chin

Open publisher page 145 citations

Abstract

Incongruent melting phenomenon shows the feasibility of multilevel control using the phase-change material Ga2Te3Sb5 (Ga-TS). Electrical results showed that Ga-TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase-change random-access-memory applications.

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What this paper is about

Incongruent melting phenomenon shows the feasibility of multilevel control using the phase-change material Ga2Te3Sb5 (Ga-TS). Electrical results showed that Ga-TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase-change random-access-memory applications.

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OpenAlex reports 145 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Incongruent melting phenomenon shows the feasibility of multilevel control using the phase-change material Ga2Te3Sb5 (Ga-TS). Electrical results showed that Ga-TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase-change random-access-memory applications.

Key concepts: Materials science, Phase-change memory, Reset (finance), Data retention, Phase (matter), Phase change, Melting temperature, Thermal

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