Band-Gap Energy and Effective Mass of BGaN

The band-gap energies and effective masses of boron gallium nitride (BGaN) ternaries were estimated. The band-gap energies of B x Ga1-x N ternaries increase proportionally with the boron composition x. However, the effective masses of electrons and holes in BGaN ternaries are almost equal to those of GaN. We have fabricated BGaN layers on 6H–SiC substrates using metal-organic vapor phase epitaxy (MOVPE). We examined the photoluminescence spectra of these layers. The band-gap energies and effective masses estimated using the photoluminescence results are consistent with those estimated theoretically.