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2009•The Journal of the Korean Institute of Information and Communication EngineeringRequires access

Nano-structural Characteristics of N-doped ZnO Thin Films

Eun‐Ju Lee, Ruirui Zhang, Jae-Don Park, Giwan Yoon

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Abstract

N-doped ZnO thin films with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, gas was employed as a dopant source and various deposition conditions such as gas fraction and RF power were applied. The depth pofiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by Auger Electron Spectroscopy(AES) and the nano-scale structural characteristics of the N-doped ZnO thin films were also investigated by a scanning electron microscope (SEM) technique.

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N-doped ZnO thin films with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, gas was employed as a dopant source and various deposition conditions such as gas fraction and RF power were applied. The depth pofiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by Auger Electron Spectroscopy(AES) and the nano-scale structural characteristics of the N-doped ZnO thin films were also investigated by a scanning electron microscope (SEM) technique.

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Available abstract

N-doped ZnO thin films with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, gas was employed as a dopant source and various deposition conditions such as gas fraction and RF power were applied. The depth pofiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by Auger Electron Spectroscopy(AES) and the nano-scale structural characteristics of the N-doped ZnO thin films were also investigated by a scanning electron microscope (SEM) technique.

Key concepts: Materials science, Auger electron spectroscopy, Thin film, Dopant, Scanning electron microscope, Wafer, Sputter deposition, Doping

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