Spin-transfer Torque MRAM - Status and Outlook
G. Hu
Abstract
G. Hu
Abstract
Spin-Transfer-Torque (STT) MRAM is an emerging memory technology with a unique combination of non-volatility and high write endurance. STT-MRAM products have been commercially available for both standalone memory and eFlash-replacement applications by successfully integrating magnetic tunnel junctions with CMOS technology. This talk will first give a brief overview of the current status of the STT-MRAM technology and then focus on materials innovations and remaining challenges to further expand STT-MRAM's application space.
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Spin-Transfer-Torque (STT) MRAM is an emerging memory technology with a unique combination of non-volatility and high write endurance. STT-MRAM products have been commercially available for both standalone memory and eFlash-replacement applications by successfully integrating magnetic tunnel junctions with CMOS technology. This talk will first give a brief overview of the current status of the STT-MRAM technology and then focus on materials innovations and remaining challenges to further expand STT-MRAM's application space.
Key concepts: Magnetoresistive random-access memory, Spin-transfer torque, Torque, CMOS, Tunnel magnetoresistance, Electrical engineering, Focus (optics), Spin offs