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2021•Unpublished venueRequires access

2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

G. Hu, G. Lauer, J. Z. Sun, Pouya Hashemi, Christopher Safranski, S. Brown, L. Buzi, Eric R. J. Edwards, C. D’Emic, E. Galligan, M. Gottwald, Oki Gunawan, Hoeryong Jung, J. Kim, K. Latzko, J. Nowak, P. L. Trouilloud, S. Zare, D. C. Worledge

Open publisher page 33 citations

Abstract

We introduce a new device for reducing the switching current, Ic, in Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM). The Double Spin-torque Magnetic Tunnel Junction (DS-MTJ) uses spin torque from both top and bottom free-layer interfaces to reduce Ic by 2x. However, unlike previous work using Double Magnetic Tunnel Junctions (DMTJs), the DS-MTJ does not suffer from reduced magneto resistance (MR) due to increased series resistance. Experimental data using 10 ns write pulses demonstrates 2x reduction in Ic, and reliable writing down to an error-floor of write-error-rate (WER) = 1e-6.

About this research paper

What this paper is about

We introduce a new device for reducing the switching current, Ic, in Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM). The Double Spin-torque Magnetic Tunnel Junction (DS-MTJ) uses spin torque from both top and bottom free-layer interfaces to reduce Ic by 2x. However, unlike previous work using Double Magnetic Tunnel Junctions (DMTJs), the DS-MTJ does not suffer from reduced magneto resistance (MR) due to increased series resistance. Experimental data using 10 ns write pulses demonstrates 2x reduction in Ic, and reliable writing down to an error-floor of write-error-rate (WER) = 1e-6.

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OpenAlex reports 33 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We introduce a new device for reducing the switching current, Ic, in Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM). The Double Spin-torque Magnetic Tunnel Junction (DS-MTJ) uses spin torque from both top and bottom free-layer interfaces to reduce Ic by 2x. However, unlike previous work using Double Magnetic Tunnel Junctions (DMTJs), the DS-MTJ does not suffer from reduced magneto resistance (MR) due to increased series resistance. Experimental data using 10 ns write pulses demonstrates 2x reduction in Ic, and reliable writing down to an error-floor of write-error-rate (WER) = 1e-6.

Key concepts: Magnetoresistive random-access memory, Tunnel magnetoresistance, Spin-transfer torque, Torque, Magnetoresistance, Materials science, Reduction (mathematics), Current (fluid)

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