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2013•Unpublished venueRequires access

Future prospects of MRAM technologies

Shinji Yuasa, Akio Fukushima, Kay Yakushiji, Takayuki Nozaki, Makoto Konoto, H. Maehara, Hitoshi Kubota, Tomohiro Taniguchi, Hiroko Arai, Hiroshi Imamura, Koji Ando, Yoichi Shiota, Frédéric Bonell, Yoshishige Suzuki, N. Shimomura, E. Kitagawa, Junichi Ito, Shinobu Fujita, Kazutaka Abe, Kumiko Nomura, Hiroshi Noguchi, H. Yoda

Open publisher page 65 citations

Abstract

This paper presents a review and future prospects for the tunnel magnetoresistance (TMR) effect in magnetic tunnel junction (MTJ) and spin manipulation technologies such as spin-transfer torque (STT) for magnetoresistive random access memory (MRAM). Major challenges for ultrahigh-density STT-MRAM with perpendicular magnetization and novel functional devices related to MRAM are discussed.

About this research paper

What this paper is about

This paper presents a review and future prospects for the tunnel magnetoresistance (TMR) effect in magnetic tunnel junction (MTJ) and spin manipulation technologies such as spin-transfer torque (STT) for magnetoresistive random access memory (MRAM). Major challenges for ultrahigh-density STT-MRAM with perpendicular magnetization and novel functional devices related to MRAM are discussed.

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OpenAlex reports 65 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper presents a review and future prospects for the tunnel magnetoresistance (TMR) effect in magnetic tunnel junction (MTJ) and spin manipulation technologies such as spin-transfer torque (STT) for magnetoresistive random access memory (MRAM). Major challenges for ultrahigh-density STT-MRAM with perpendicular magnetization and novel functional devices related to MRAM are discussed.

Key concepts: Magnetoresistive random-access memory, Spin-transfer torque, Tunnel magnetoresistance, Magnetoresistance, Torque, Magnetization, Materials science, Random access memory

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