ScholarLens Back to search
2023•Unpublished venueRequires access

VCMA-MTJ: towards Ghz operation low power MRAM

Woojin Kim, Robert Carpenter, Kiroubanand Sankaran, Siddarth Rao, Diego Favaro, Nico Jossart, Nathali Franchina Vergel, Davide Crotti, Kurt L. Wostyn, Gouri Sankar Kar, Sébastien Couet

Open publisher page 0 citations

Abstract

With STT-MRAM now in mass production for embedded flash memory replacement at several foundries, research shifts towards lower power switching mechanisms. We review opportunities and challenges of voltage controlled MRAM through the VCMA effect. We present the material research needed to improve VCMA coefficient in production-relevant magnetic tunnel junctions. We also review precessional switching mechanism and constrains it poses on device operation and propose several solutions and in depth studies carried out on 300mm integrated VCMA-MTJ devices.

About this research paper

What this paper is about

With STT-MRAM now in mass production for embedded flash memory replacement at several foundries, research shifts towards lower power switching mechanisms. We review opportunities and challenges of voltage controlled MRAM through the VCMA effect. We present the material research needed to improve VCMA coefficient in production-relevant magnetic tunnel junctions. We also review precessional switching mechanism and constrains it poses on device operation and propose several solutions and in depth studies carried out on 300mm integrated VCMA-MTJ devices.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

With STT-MRAM now in mass production for embedded flash memory replacement at several foundries, research shifts towards lower power switching mechanisms. We review opportunities and challenges of voltage controlled MRAM through the VCMA effect. We present the material research needed to improve VCMA coefficient in production-relevant magnetic tunnel junctions. We also review precessional switching mechanism and constrains it poses on device operation and propose several solutions and in depth studies carried out on 300mm integrated VCMA-MTJ devices.

Key concepts: Magnetoresistive random-access memory, Tunnel magnetoresistance, Racetrack memory, Flash (photography), Voltage, Optoelectronics, Materials science, Power (physics)

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
VCMA-MTJ: towards Ghz operation low power MRAM — Research Paper | ScholarLens