ScholarLens Back to search
2003•Unpublished venueRequires access

MRAM with improved magnetic tunnel junction material

Hiroshi Kano, K. Bessho, Yutaka Higo, Kazuhiro Ohba, Mitsuyo HASHIMOTO, Takahiro Mizuguchi, Masanori Hosomi

Open publisher page 15 citations

Abstract

Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ material with excellent characteristics, which is evaluated through the MRAM/MTJ test element groups (TEG) with a MOS circuit.

About this research paper

What this paper is about

Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ material with excellent characteristics, which is evaluated through the MRAM/MTJ test element groups (TEG) with a MOS circuit.

Why it matters

OpenAlex reports 15 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ material with excellent characteristics, which is evaluated through the MRAM/MTJ test element groups (TEG) with a MOS circuit.

Key concepts: Magnetoresistive random-access memory, Tunnel magnetoresistance, Materials science, Amorphous solid, Optoelectronics, Tunnel junction, Engineering physics, Electrical engineering

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
MRAM with improved magnetic tunnel junction material — Research Paper | ScholarLens