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2000•IEEE Transactions on MagneticsRequires access

Recent developments in magnetic tunnel junction MRAM

S. Tehrani, B. N. Engel, Jon M. Slaughter, E. Chen, Mark DeHerrera, Mark Durlam, P. Naji, Renu Whig, Jason Janesky, J. Calder

Open publisher page 326 citations

Abstract

We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the 1-1000 k/spl Omega/-/spl mu/m/sup 2/ range with MR values above 40%. The switching characteristics are mainly governed by the magnetic shape anisotropy that arises from the element boundaries. The switching repeatability, as well as hard axis selectability, are shown to be dependent on both shape and aspect ratio. MTJ memory elements were successfully integrated with 0.6 /spl mu/m CMOS technology, achieving read and program address access times of 14 ns in a 256/spl times/2 MRAM.

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What this paper is about

We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the 1-1000 k/spl Omega/-/spl mu/m/sup 2/ range with MR values above 40%. The switching characteristics are mainly governed by the magnetic shape anisotropy that arises from the element boundaries. The switching repeatability, as well as hard axis selectability, are shown to be dependent on both shape and aspect ratio. MTJ memory elements were successfully integrated with 0.6 /spl mu/m CMOS technology, achieving read and program address access times of 14 ns in a 256/spl times/2 MRAM.

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Available abstract

We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the 1-1000 k/spl Omega/-/spl mu/m/sup 2/ range with MR values above 40%. The switching characteristics are mainly governed by the magnetic shape anisotropy that arises from the element boundaries. The switching repeatability, as well as hard axis selectability, are shown to be dependent on both shape and aspect ratio. MTJ memory elements were successfully integrated with 0.6 /spl mu/m CMOS technology, achieving read and program address access times of 14 ns in a 256/spl times/2 MRAM.

Key concepts: Magnetoresistive random-access memory, Tunnel magnetoresistance, Materials science, Magnetoresistance, CMOS, Random access memory, Condensed matter physics, Magnetic storage

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