Javier Garcı́a, Victor Vega Martínez, V.M. Prida
Abstract
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Atomic layer deposition (ALD) is a vapor-phase technique that consists of the alternation of separated self-limiting surface reactions, which enable film thickness to be accurately controlled at the angstrom level, based on the former atomic layer epitaxy method [...].
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Atomic layer deposition (ALD) is a vapor-phase technique that consists of the alternation of separated self-limiting surface reactions, which enable film thickness to be accurately controlled at the angstrom level, based on the former atomic layer epitaxy method [...].
Key concepts: Atomic layer deposition, Limiting, Atomic layer epitaxy, Angstrom, Materials science, Nanotechnology, Layer (electronics), Epitaxy