A Novel Chemical Route to Atomic Layer Deposition of ZnS Thin Film from Diethylzinc and 1,5‐Pentanedithiol

This study describes a novel chemical route to grow ZnS thin films via atomic layer deposition (ALD). By using diethylzinc and 1,5‐pentanedithiol as precursors of Zn and S, respectively, ZnS films are grown on substrates with an atomic precision by repeating self‐limiting chemisorption of each precursor. The growth‐per‐cycle of the ALD process is around 0.1 Å per cycle at 150°C, and the as‐grown films are characterized to be amorphous ZnS by X‐ray diffraction and X‐ray photoelectron spectroscopy.