2022•Unpublished venueRequires access

Spintronic devices and architectures for radiation hardened environments (past, current, and future) (Conference Presentation)

Thomas D. Boone

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Abstract

Spin Transfer Torque (STT) MRAM is a very attractive enabling technology for space and defense applications due to its versatility (NVM to SRAM like performance), wide operating temperature range, high density and radiation tolerance. In this presentation we will review the promise of state-of-the-art STT-MRAM and its potential impact on current and future space applications. Included will be a thorough review of recent rad-effects characterization results for STT-MRAM. More exotic spintronic technology such as Spin Orbit Torque (SOT) MRAM and Voltage Controlled Magnetic Anisotropy (VCMA) MRAM will be discussed and considered for their specific benefits in rad-hard applications.

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What this paper is about

Spin Transfer Torque (STT) MRAM is a very attractive enabling technology for space and defense applications due to its versatility (NVM to SRAM like performance), wide operating temperature range, high density and radiation tolerance. In this presentation we will review the promise of state-of-the-art STT-MRAM and its potential impact on current and future space applications. Included will be a thorough review of recent rad-effects characterization results for STT-MRAM. More exotic spintronic technology such as Spin Orbit Torque (SOT) MRAM and Voltage Controlled Magnetic Anisotropy (VCMA) MRAM will be discussed and considered for their specific benefits in rad-hard applications.

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Available abstract

Spin Transfer Torque (STT) MRAM is a very attractive enabling technology for space and defense applications due to its versatility (NVM to SRAM like performance), wide operating temperature range, high density and radiation tolerance. In this presentation we will review the promise of state-of-the-art STT-MRAM and its potential impact on current and future space applications. Included will be a thorough review of recent rad-effects characterization results for STT-MRAM. More exotic spintronic technology such as Spin Orbit Torque (SOT) MRAM and Voltage Controlled Magnetic Anisotropy (VCMA) MRAM will be discussed and considered for their specific benefits in rad-hard applications.

Key concepts: Magnetoresistive random-access memory, Spintronics, Spin-transfer torque, Racetrack memory, Radiation hardening, Computer science, Electrical engineering, Torque

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