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2022•Unpublished venueRequires access

Spin-Transfer-Torque MRAM: the Next Revolution in Memory

Daniel C. Worledge

Open publisher page 24 citations

Abstract

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four main applications of STT-MRAM are described. A review is given of the initial demonstration of perpendicular STT-MRAM and the subsequent development of this technology at IBM. Finally, several potential paths forward to more advanced applications are described.

About this research paper

What this paper is about

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four main applications of STT-MRAM are described. A review is given of the initial demonstration of perpendicular STT-MRAM and the subsequent development of this technology at IBM. Finally, several potential paths forward to more advanced applications are described.

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OpenAlex reports 24 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four main applications of STT-MRAM are described. A review is given of the initial demonstration of perpendicular STT-MRAM and the subsequent development of this technology at IBM. Finally, several potential paths forward to more advanced applications are described.

Key concepts: Magnetoresistive random-access memory, Spin-transfer torque, Torque, IBM, Electrical engineering, Computer science, Random access memory, Magnetoresistance

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