2016•Unpublished venueRequires access
Performance Evaluation of Analog Circuits with Deep Submicrometer MOSFETs in the Subthreshold Regime of Operation
Yasuhisa Ōmura, Abhijit Mallik, Naoto Matsuo
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Abstract
In this chapter, the analog performance of conventional deep submicrometer metal oxide semiconductor field-effect transistors (MOSFETs) in the subthreshold region is studied in terms of transconductance g m and transconductance-to-drain-current ratio g m /I D . An improved drift-diffusion-based current model is proposed, which is used to predict the analog performance. Very good agreement between the simulation results and the corresponding model predictions is obtained.