ScholarLens Back to search
2011•Unpublished venueRequires access

Analysis of subthreshold characteristics of p-MOSFETs with (0/90°) and 45° channel orientation

T. Matsuda, H. Hanai, F. Asano, H. Iwata, T. Ohzone

Open publisher page 0 citations

Abstract

Subthreshold characteristics of CMOS devices become important for mixed signal SOCs (System On a Chip) [1]. Since matching of critical devices in important parameters such as IDsat (saturation drain current), Vτ (threshold voltage), gm (transconductance) and S (subthreshold slope) are important in CMOS analog circuit design, channel orientation and current flow direction should be carefully arranged in LSI design. In this paper, orientation dependence and asymmetry of subthreshold characteristics in 0.18 μm p MOSFET are analyzed using the test structure designed in our previous work [2].

About this research paper

What this paper is about

Subthreshold characteristics of CMOS devices become important for mixed signal SOCs (System On a Chip) [1]. Since matching of critical devices in important parameters such as IDsat (saturation drain current), Vτ (threshold voltage), gm (transconductance) and S (subthreshold slope) are important in CMOS analog circuit design, channel orientation and current flow direction should be carefully arranged in LSI design. In this paper, orientation dependence and asymmetry of subthreshold characteristics in 0.18 μm p MOSFET are analyzed using the test structure designed in our previous work [2].

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Subthreshold characteristics of CMOS devices become important for mixed signal SOCs (System On a Chip) [1]. Since matching of critical devices in important parameters such as IDsat (saturation drain current), Vτ (threshold voltage), gm (transconductance) and S (subthreshold slope) are important in CMOS analog circuit design, channel orientation and current flow direction should be carefully arranged in LSI design. In this paper, orientation dependence and asymmetry of subthreshold characteristics in 0.18 μm p MOSFET are analyzed using the test structure designed in our previous work [2].

Key concepts: Subthreshold conduction, Transconductance, CMOS, Subthreshold slope, MOSFET, Threshold voltage, Orientation (vector space), Electrical engineering

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Analysis of subthreshold characteristics of p-MOSFETs with (0/90°) and 45° channel orientation — Research Paper | ScholarLens