2021•AIP AdvancesOpen access

A review on low-dimensional novel optoelectronic devices based on carbon nanotubes

Yutao Li, Kuan Sun, Di Luo, Yiming Wang, Lei Han, Hang Liu, Xiaoliang Guo, Duli Yu, Tian‐Ling Ren

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Abstract

With the development of integrated circuits according to Moore’s law, traditional silicon-based devices have gradually reached their performance limitation. Nanoelectronics based on carbon nanomaterials provides a broad prospect for the continuation of Moore’s law. In particular, in the field of optoelectronic devices, it is necessary to further develop new types of nano-optoelectronic devices. Carbon nanotubes (CNTs) are one of the representative materials of nanoelectronics with excellent electrical and optical properties, e.g., high mobility, suitable band structure, and good infrared absorption. The application of CNTs in optoelectronic devices is a very attractive research topic, which has been developed rapidly in recent years. Until now, various prototypes of CNT-based optoelectronic devices have been developed. In this Review, we briefly introduce the structure and photoelectric properties of CNTs. Then, according to different photo-electron coupling mechanisms, four types of CNTs based on optoelectronic devices are introduced in detail, namely, solar cells, photodetectors, light-emitting diodes, and lasers. Intrinsic and composite CNT-based optoelectronic devices are presented in order to describe the development of CNT-based optoelectronic devices. Finally, different material preparation, separation, and mixing methods of CNTs are discussed, which are the methods for basic material preparation for the fabrication of high performance CNT-based optoelectronic devices. An in-depth study of the development trend of CNT-based optoelectronic devices will contribute to the future development of novel high-performance nanoelectronic devices.

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What this paper is about

With the development of integrated circuits according to Moore’s law, traditional silicon-based devices have gradually reached their performance limitation. Nanoelectronics based on carbon nanomaterials provides a broad prospect for the continuation of Moore’s law. In particular, in the field of optoelectronic devices, it is necessary to further develop new types of nano-optoelectronic devices. Carbon nanotubes (CNTs) are one of the representative materials of nanoelectronics with excellent electrical and optical properties, e.g., high mobility, suitable band structure, and good infrared absorption. The application of CNTs in optoelectronic devices is a very attractive research topic, which has been developed rapidly in recent years. Until now, various prototypes of CNT-based optoelectronic devices have been developed. In this Review, we briefly introduce the structure and photoelectric properties of CNTs. Then, according to different photo-electron coupling mechanisms, four types of CNTs based on optoelectronic devices are introduced in detail, namely, solar cells, photodetectors, light-emitting diodes, and lasers. Intrinsic and composite CNT-based optoelectronic devices are presented in order to describe the development of CNT-based optoelectronic devices. Finally, different material preparation, separation, and mixing methods of CNTs are discussed, which are the methods for basic material preparation for the fabrication of high performance CNT-based optoelectronic devices. An in-depth study of the development trend of CNT-based optoelectronic devices will contribute to the future development of novel high-performance nanoelectronic devices.

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Available abstract

With the development of integrated circuits according to Moore’s law, traditional silicon-based devices have gradually reached their performance limitation. Nanoelectronics based on carbon nanomaterials provides a broad prospect for the continuation of Moore’s law. In particular, in the field of optoelectronic devices, it is necessary to further develop new types of nano-optoelectronic devices. Carbon nanotubes (CNTs) are one of the representative materials of nanoelectronics with excellent electrical and optical properties, e.g., high mobility, suitable band structure, and good infrared absorption. The application of CNTs in optoelectronic devices is a very attractive research topic, which has been developed rapidly in recent years. Until now, various prototypes of CNT-based optoelectronic devices have been developed. In this Review, we briefly introduce the structure and photoelectric properties of CNTs. Then, according to different photo-electron coupling mechanisms, four types of CNTs based on optoelectronic devices are introduced in detail, namely, solar cells, photodetectors, light-emitting diodes, and lasers. Intrinsic and composite CNT-based optoelectronic devices are presented in order to describe the development of CNT-based optoelectronic devices. Finally, different material preparation, separation, and mixing methods of CNTs are discussed, which are the methods for basic material preparation for the fabrication of high performance CNT-based optoelectronic devices. An in-depth study of the development trend of CNT-based optoelectronic devices will contribute to the future development of novel high-performance nanoelectronic devices.

Key concepts: Carbon nanotube, Nanoelectronics, Materials science, Photodetector, Optoelectronics, Diode, Fabrication, Nanotechnology

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