Distributed optical proximity correction with deep-learning lithographic model for i-line photolithography

In this study, we propose a deep-learning approach to establish the lithographic model for i-line photolithography and develop an optical proximity correction (OPC) algorithm to increase the resolution limit. The applications of RETs are not only on CMOS semiconductor, but also on some metasurface which used to patterning by electron beam lithography. With the OPC algorithm, we are able to manufacture a near-infrared metalens patterning by i-line photolithography in a more efficient and less expensive way.