2023Unpublished venueOpen access

Immersion and EUV Lithography

Burn J. Lin

Open full text 1 citations

Abstract

Semiconductor technology has advanced to single-digit nanometer dimensions for the circuit elements. The minimum feature size has reached subwavelength dimension. Many resolution enhancement techniques have been developed to extend the resolution limit of optical lithography systems, namely illumination optimization, phase-shifting masks, and proximity corrections. Needless to say, the actinic wavelength and the numerical aperture of the imaging lens have been reduced in stages, The most recent innovations are Immersion lithography and Extreme UV (EUV) lithography

Open-access reader

About this research paper

What this paper is about

Semiconductor technology has advanced to single-digit nanometer dimensions for the circuit elements. The minimum feature size has reached subwavelength dimension. Many resolution enhancement techniques have been developed to extend the resolution limit of optical lithography systems, namely illumination optimization, phase-shifting masks, and proximity corrections. Needless to say, the actinic wavelength and the numerical aperture of the imaging lens have been reduced in stages, The most recent innovations are Immersion lithography and Extreme UV (EUV) lithography

Why it matters

OpenAlex reports 1 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Semiconductor technology has advanced to single-digit nanometer dimensions for the circuit elements. The minimum feature size has reached subwavelength dimension. Many resolution enhancement techniques have been developed to extend the resolution limit of optical lithography systems, namely illumination optimization, phase-shifting masks, and proximity corrections. Needless to say, the actinic wavelength and the numerical aperture of the imaging lens have been reduced in stages, The most recent innovations are Immersion lithography and Extreme UV (EUV) lithography

Key concepts: Extreme ultraviolet lithography, Immersion lithography, Lithography, Computational lithography, Next-generation lithography, Optics, Critical dimension, Photolithography

Related papers

Back to paper searchBrowse research topicsOriginal source
Immersion and EUV Lithography — Research Paper | ScholarLens