Immersion and EUV Lithography
Burn J. Lin
Abstract
Open-access reader
Burn J. Lin
Abstract
Open-access reader
Semiconductor technology has advanced to single-digit nanometer dimensions for the circuit elements. The minimum feature size has reached subwavelength dimension. Many resolution enhancement techniques have been developed to extend the resolution limit of optical lithography systems, namely illumination optimization, phase-shifting masks, and proximity corrections. Needless to say, the actinic wavelength and the numerical aperture of the imaging lens have been reduced in stages, The most recent innovations are Immersion lithography and Extreme UV (EUV) lithography
OpenAlex reports 1 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
Semiconductor technology has advanced to single-digit nanometer dimensions for the circuit elements. The minimum feature size has reached subwavelength dimension. Many resolution enhancement techniques have been developed to extend the resolution limit of optical lithography systems, namely illumination optimization, phase-shifting masks, and proximity corrections. Needless to say, the actinic wavelength and the numerical aperture of the imaging lens have been reduced in stages, The most recent innovations are Immersion lithography and Extreme UV (EUV) lithography
Key concepts: Extreme ultraviolet lithography, Immersion lithography, Lithography, Computational lithography, Next-generation lithography, Optics, Critical dimension, Photolithography