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2021•Microelectronics ReliabilityRequires access

1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect

Hao Fu, Zhaoxiang Wei, Siyang Liu, Jiaxing Wei, Hang Xu, Lihua Ni, Zhuo Yang, Weifeng Sun

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Key concepts: JFET, Saturation current, Trench, Figure of merit, Materials science, Transconductance, Optoelectronics, Saturation (graph theory)

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