2011•Unpublished venueRequires access

Effect of Ion-Implanted JFET Region on Breakdown Voltage and On-Resistance of Power VDMOS Device

Jun Xu

Abstract

Effect of ion-implanted JFET region on breakdown voltage and on-resistance of power VDMOS device was investigated.Mechanism of breakdown voltage drop induced by implantation into JFET region was discussed,and effect of implantation in JFET region on on-resistance was quantitatively analyzed.By optimizing implantation dosage with TCAD and modifying device design according to simulation results,on-resistance of the device was reduced by 8%,and breakdown voltage didn't drop significantly.

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Key concepts: JFET, Breakdown voltage, Materials science, Optoelectronics, Voltage drop, Drop (telecommunication), Voltage, Ion implantation