2004•Unpublished venueRequires access

High quality indium arsenide and related alloys grown on gallium phosphide substrates using a novel liquid phase-molecular beam epitaxy technique

Aristo Yulius

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Key concepts: Gallium arsenide, Indium phosphide, Molecular beam epitaxy, Materials science, Arsenide, Epitaxy, Optoelectronics, Indium

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High quality indium arsenide and related alloys grown on gallium phosphide substrates using a novel liquid phase-molecular beam epitaxy technique — Research Paper | ScholarLens