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The optimization of the growth on (111) gallium arsenide and (111) indium phosphide substrates by molecular beam epitaxy

Hock Huat Yeo

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Key concepts: Gallium arsenide, Indium phosphide, Molecular beam epitaxy, Materials science, Epitaxy, Optoelectronics, Indium, Gallium

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The optimization of the growth on (111) gallium arsenide and (111) indium phosphide substrates by molecular beam epitaxy — Research Paper | ScholarLens