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Hydrostatic Pressure Effect on Molecular-Beam Epitaxy-Grown Indium Gallium Phosphide Alloys and Gallium Arsenide/indium Gallium Phosphide Quantum Well Structures

Jianhui Chen

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Key concepts: Gallium arsenide, Gallium, Indium phosphide, Hydrostatic pressure, Indium, Molecular beam epitaxy, Materials science, Epitaxy

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Hydrostatic Pressure Effect on Molecular-Beam Epitaxy-Grown Indium Gallium Phosphide Alloys and Gallium Arsenide/indium Gallium Phosphide Quantum Well Structures — Research Paper | ScholarLens