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Current Gain Dependence on the Emitter Size of Polysilicon-Emitter Bipolar Transistor

Miura-Mattausch

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Key concepts: Common emitter, Bipolar junction transistor, Heterostructure-emitter bipolar transistor, Optoelectronics, Materials science, Polysilicon depletion effect, Bipolar transistor biasing, Transistor

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Current Gain Dependence on the Emitter Size of Polysilicon-Emitter Bipolar Transistor — Research Paper | ScholarLens