M. Miura–Mattausch
Abstract
It is shown that the current gain increases for reduced emitter sizes of self-aligned bipolar transistors with polysilicon emitter contact. This phenomenon is explained by the difference between the polysilicon contact area and the effective emitter area derived from electrical data.
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It is shown that the current gain increases for reduced emitter sizes of self-aligned bipolar transistors with polysilicon emitter contact. This phenomenon is explained by the difference between the polysilicon contact area and the effective emitter area derived from electrical data.
Key concepts: Common emitter, Polysilicon depletion effect, Heterostructure-emitter bipolar transistor, Bipolar junction transistor, Materials science, Optoelectronics, Transistor, Silicon