Design and Characteristics of Polysilicon Emitter Bipolar Junction Transistors

Through the aid of empirical equations, a process simulator and a device simulator, a polysilicon (p-Si) emitter bipolar junction transistor (PEBJT) suitable for mass-production has been designed, fabricated, and characterized. The device with an emitter size of 5 µm × 9 µm has more than 1 order flatness of h FE vs. I C , and has more than 4 orders flatness with an emitter size of 9 µm × 9 µm The ideality factors of the collector current are around 1 for the operating temperature ranging from 24°C to 125°C, with base to emitter applied voltage = 0.4–0.5.