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2008•Proceedings - International Symposium for Testing and Failure AnalysisRequires access

Laser Scanning Localization Technique for Fast Analysis of High Speed DRAM Devices

Martin Versen, Achim Schramm, Jan Schnepp, Sascha Hoch, Tapan Vikas, Dorina Diaconescu

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Abstract

Abstract Soft defect localization (SDL) is a method of laser scanning microscopy that utilizes the changing pass/fail behavior of an integrated circuit under test and temperature influence. Historically the pass and fail states are evaluated by a tester that leads to long and impracticable measurement times for dynamic random access memories (DRAM). The new method using a high speed comparison device allows SDL image acquisition times of a few minutes and a localization of functional DRAM fails that are caused by defects in the DRAM periphery that has not been possible before. This new method speeds up significantly the turn-around time in the failure analysis (FA) process compared to knowledge based FA.

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What this paper is about

Abstract Soft defect localization (SDL) is a method of laser scanning microscopy that utilizes the changing pass/fail behavior of an integrated circuit under test and temperature influence. Historically the pass and fail states are evaluated by a tester that leads to long and impracticable measurement times for dynamic random access memories (DRAM). The new method using a high speed comparison device allows SDL image acquisition times of a few minutes and a localization of functional DRAM fails that are caused by defects in the DRAM periphery that has not been possible before. This new method speeds up significantly the turn-around time in the failure analysis (FA) process compared to knowledge based FA.

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Available abstract

Abstract Soft defect localization (SDL) is a method of laser scanning microscopy that utilizes the changing pass/fail behavior of an integrated circuit under test and temperature influence. Historically the pass and fail states are evaluated by a tester that leads to long and impracticable measurement times for dynamic random access memories (DRAM). The new method using a high speed comparison device allows SDL image acquisition times of a few minutes and a localization of functional DRAM fails that are caused by defects in the DRAM periphery that has not been possible before. This new method speeds up significantly the turn-around time in the failure analysis (FA) process compared to knowledge based FA.

Key concepts: Dram, Dynamic random-access memory, Process (computing), Computer science, Laser, Integrated circuit, Laser scanning, Random access memory

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