H. Sunami
Abstract
The trends in MOS dynamic random-access memories (dRAM's) are reviewed with emphasis on the memory cell structures. A projected trend in the scalability of future dRAM's is discussed based on the review presented here. Finally, some candidates which are assumed to be suitable for memory cells of future dRAM's are proposed.
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The trends in MOS dynamic random-access memories (dRAM's) are reviewed with emphasis on the memory cell structures. A projected trend in the scalability of future dRAM's is discussed based on the review presented here. Finally, some candidates which are assumed to be suitable for memory cells of future dRAM's are proposed.
Key concepts: Dram, Scalability, Dynamic random-access memory, Universal memory, Random access memory, Computer science, Random access, Non-volatile memory