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Molecular Beam Epitaxial Growth and Measurement of Conduction-Band Discontinuity in Pseudomorphic INDIUM(0.52) ALUMINUM(0.48) Arsenide/indium(x) GALLIUM(1-X) Arsenide Heterostructure

Jin‐Hua Huang

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Key concepts: Gallium arsenide, Indium, Molecular beam epitaxy, Heterojunction, Indium arsenide, Materials science, Gallium, Epitaxy

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Molecular Beam Epitaxial Growth and Measurement of Conduction-Band Discontinuity in Pseudomorphic INDIUM(0.52) ALUMINUM(0.48) Arsenide/indium(x) GALLIUM(1-X) Arsenide Heterostructure — Research Paper | ScholarLens