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Molecular Beam Epitaxial Growth and Characterization of Mismatched Indium Gallium Arsenide and Indium Aluminum Arsenide Layers on Indium Phosphide

B. R. Bennett

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Key concepts: Gallium arsenide, Indium phosphide, Indium, Arsenide, Indium arsenide, Materials science, Epitaxy, Molecular beam epitaxy

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Molecular Beam Epitaxial Growth and Characterization of Mismatched Indium Gallium Arsenide and Indium Aluminum Arsenide Layers on Indium Phosphide — Research Paper | ScholarLens