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High Electron Mobility Transistors Built on MBE Grown Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Heterostructures

Yi-Ching Pao

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Key concepts: Gallium arsenide, Indium phosphide, Indium, Indium arsenide, Materials science, Optoelectronics, Arsenide, Heterojunction

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High Electron Mobility Transistors Built on MBE Grown Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Heterostructures — Research Paper | ScholarLens