Single-mode 1180 nm GaInNAs/GaAs DBR laser diode for frequency doubling to 590 nm

Many applications in the field of medicine and spectroscopy would greatly benefit from the availability of practical and cost-effective yellow lasers, but this wavelength range cannot be practically accessed via direct emission from semiconductor gain materials. However, frequency doubled semiconductor lasers (semiconductor disk lasers or edge-emitting diode lasers) are a viable technology for generating light at the yellow–red band, which is difficult to reach otherwise [1–4]. For these lasers, GaIn(N)As/GaAs quantum well (QW) gain material appears to be an ideal candidate; the required amount of N is small ensuring a good material quality while the gain and carrier confinement are superior to alternative approaches.