John Rennie, M. Okajima, Minoru Watanabe, G. Hatakoshi
Abstract
A 634nm InGaAlP laser, incorporating a multiple quantum barrier (MQB), has been developed exhibiting a high, 74"C, maximum operating temperature and a law threshold current 49mA. The presence of the MQB inducing these superior characteristics.
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A 634nm InGaAlP laser, incorporating a multiple quantum barrier (MQB), has been developed exhibiting a high, 74"C, maximum operating temperature and a law threshold current 49mA. The presence of the MQB inducing these superior characteristics.
Key concepts: Diode, Optoelectronics, Laser, Semiconductor laser theory, Materials science, Quantum, Optics, Physics