Short-wavelength GaInNAs semiconductor disk lasers
S. Calvez, Jennifer E. Hastie, Sharon Vetter, Martin D. Dawson, Ville‐Markus Korpijärvi, Janne Puustinen, Mircea D. Guina, O. G. Okhotnikov, M. Pessa
Abstract
S. Calvez, Jennifer E. Hastie, Sharon Vetter, Martin D. Dawson, Ville‐Markus Korpijärvi, Janne Puustinen, Mircea D. Guina, O. G. Okhotnikov, M. Pessa
Abstract
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
Key concepts: Optoelectronics, Laser, Materials science, Semiconductor laser theory, Semiconductor, Disk laser, Wavelength, Gallium arsenide