2008Unpublished venueRequires access

Short-wavelength GaInNAs semiconductor disk lasers

S. Calvez, Jennifer E. Hastie, Sharon Vetter, Martin D. Dawson, Ville‐Markus Korpijärvi, Janne Puustinen, Mircea D. Guina, O. G. Okhotnikov, M. Pessa

Open publisher page 0 citations

Abstract

We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.

About this research paper

What this paper is about

We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.

Key concepts: Optoelectronics, Laser, Materials science, Semiconductor laser theory, Semiconductor, Disk laser, Wavelength, Gallium arsenide

Related papers

Back to paper searchBrowse research topicsOriginal source
Short-wavelength GaInNAs semiconductor disk lasers — Research Paper | ScholarLens