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Pseudomorphic and Strain-Relaxed Indium Gallium Arsenide Channel Modulation-Doped Field-Effect Transistors on Gallium Arsenide and Indium Phosphide Substrates.

D. Cheskis

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Key concepts: Gallium arsenide, Materials science, Indium phosphide, Indium arsenide, Gallium phosphide, Indium, Optoelectronics, Doping

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Pseudomorphic and Strain-Relaxed Indium Gallium Arsenide Channel Modulation-Doped Field-Effect Transistors on Gallium Arsenide and Indium Phosphide Substrates. — Research Paper | ScholarLens